IPB60R125CPATMA1
MOSFET N-CH 600V 25A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CP series N-Channel Power MOSFET, part number IPB60R125CPATMA1. This 600V device features a continuous drain current of 25A at 25°C (Tc) and a maximum power dissipation of 208W (Tc). The drain-source on-resistance (Rds On) is specified at a maximum of 125mOhm at 16A and 10V gate-source voltage. Designed for surface mount applications, it is housed in a PG-TO263-3-2 package. Key parameters include a gate charge (Qg) of 70nC at 10V and an input capacitance (Ciss) of 2500pF at 100V. This component is suitable for demanding applications in power supplies, industrial motor control, and solar inverters. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ CPRoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1.1mA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 100 V |
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