IPB60R120C7ATMA1
MOSFET N-CH 600V 19A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ C7 series N-Channel Power MOSFET, part number IPB60R120C7ATMA1. This device features a 600V drain-source breakdown voltage and a continuous drain current of 19A at 25°C (Tc). The MOSFET exhibits a maximum Rds(on) of 120mOhm at 7.8A, 10V, with a gate charge (Qg) of 34 nC at 10V. Input capacitance (Ciss) is rated at 1500 pF at 400V. Designed for surface mounting in the PG-TO263-3-2 (TO-263-3, D2PAK) package, it offers a maximum power dissipation of 92W (Tc). Operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power supplies, server power, solar inverters, and industrial power systems.
Additional Information
Series: CoolMOS™ C7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 7.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 92W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 390µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 400 V |
Request a Quote
Clients Also Buy
IPD65R225C7ATMA1
MOSFET N-CH 650V 11A TO252-3
IPL65R070C7AUMA1
MOSFET N-CH 650V 28A 4VSON
IPB65R045C7ATMA2
MOSFET N-CH 650V 46A TO263-3
