IPB60R099CPATMA1
MOSFET N-CH 600V 31A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CP series N-Channel Power MOSFET, part number IPB60R099CPATMA1. This surface mount device offers a 600V drain-source voltage and a continuous drain current of 31A at 25°C. The MOSFET features a maximum on-resistance of 99mOhm at 18A, 10V gate drive. With a total gate charge of 80 nC and input capacitance of 2800 pF, it is suitable for high-frequency switching applications. The device is packaged in a PG-TO263-3-2 (TO-263AB) package, supplied on tape and reel. Its high power dissipation capability of 255W at 25°C makes it ideal for use in power supplies, server applications, and industrial power systems.
Additional Information
Series: CoolMOS™ CPRoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 255W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 100 V |
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