IPB60R099C6ATMA1
MOSFET N-CH 600V 37.9A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ C6 series N-Channel Power MOSFET, IPB60R099C6ATMA1, offers a 600V breakdown voltage and a continuous drain current of 37.9A at 25°C (Tc). This device features a maximum on-resistance of 99mOhm at 18.1A and 10V Vgs, with a gate charge of 119 nC at 10V. The input capacitance (Ciss) is 2660 pF at 100V. Designed for surface mounting, it is housed in a TO-263-3, D2PAK package. The IPB60R099C6ATMA1 is suitable for high-voltage switching applications in power supplies, solar inverters, and industrial motor drives. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 278W (Tc).
Additional Information
Series: CoolMOS™ C6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 18.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1.21mA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 119 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2660 pF @ 100 V |
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