IPB60R090CFD7ATMA1
MOSFET N-CH 600V 25A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CFD7 series N-channel power MOSFET, part IPB60R090CFD7ATMA1, offers 600V drain-source breakdown voltage and 25A continuous drain current at 25°C. This TO-263-3 surface mount device features a maximum Rds On of 90mOhm at 11.4A and 10V Vgs. Key parameters include a gate charge of 51 nC at 10V, input capacitance of 2103 pF at 400V, and a maximum power dissipation of 124W. The operating temperature range is -55°C to 150°C. This component is suitable for applications in server power supplies, industrial power supplies, and solar inverters.
Additional Information
Series: CoolMOS™ CFD7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 11.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 124W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 570µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2103 pF @ 400 V |
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