IPB530N15N3GATMA1
MOSFET N-CH 150V 21A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB530N15N3GATMA1 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 150 V and a continuous Drain Current (Id) of 21 A at 25°C, with a maximum power dissipation of 68 W at the same temperature. The Rds(on) is specified at a maximum of 53 mOhm when conducting 18 A with a 10 V gate-source voltage. Key parameters include a Gate Charge (Qg) of 12 nC (max) at 10 V and an Input Capacitance (Ciss) of 887 pF (max) at 75 V. The device operates across a wide temperature range of -55°C to 175°C (TJ). Packaged in a surface-mount TO-263-3, D2PAK, this MOSFET is suitable for use in power supplies, motor control, and automotive applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 53mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 35µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 887 pF @ 75 V |
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