IPB50R299CPATMA1
MOSFET N-CH 550V 12A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPB50R299CPATMA1, offers a 550V drain-source breakdown voltage and 12A continuous drain current at 25°C. This surface mount device, housed in a PG-TO263-3-2 (TO-263AB) package, features a maximum on-resistance of 299mOhm at 6.6A and 10V gate-source voltage. Key parameters include a 104W maximum power dissipation, 31nC gate charge, and 1190pF input capacitance. Designed for efficient power conversion, this MOSFET is suitable for applications in server power supplies, industrial power supplies, and telecom power. The operating temperature range is -55°C to 150°C.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 299mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 440µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 100 V |
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