IPB50R250CPATMA1
MOSFET N-CH 550V 13A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPB50R250CPATMA1 is a CoolMOS™ N-channel power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 550V and a continuous drain current (Id) of 13A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 250mOhm at 7.8A and 10V, with a gate charge (Qg) of 36 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 1420 pF at 100V. The IPB50R250CPATMA1 is packaged in a PG-TO263-3-2 (TO-263AB) surface-mount package, supplied on tape and reel. With a maximum power dissipation of 114W (Tc) and an operating temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for use in power factor correction (PFC), server power supplies, and solar inverters.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 7.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 114W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 520µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1420 pF @ 100 V |
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