IPB50CN10NGATMA1
MOSFET N-CH 100V 20A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPB50CN10NGATMA1, offers a 100V drain-source voltage and 20A continuous drain current at 25°C (Tc). This surface mount device features a maximum Rds(on) of 50mOhm at 20A and 10V Vgs, with a gate charge of 16 nC at 10V. The TO-263-3, D2PAK package provides a robust thermal performance with 44W power dissipation at 25°C (Tc). Key parameters include an input capacitance (Ciss) of 1090 pF at 50V and a threshold voltage (Vgs(th)) of 4V at 20µA. This component is suitable for applications in power supplies, electric vehicle charging, and industrial motor control. It maintains operation across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 44W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 20µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1090 pF @ 50 V |
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