IPB47N10SL26ATMA1
MOSFET N-CH 100V 47A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® IPB47N10SL26ATMA1 is an N-channel power MOSFET featuring 100V drain-source breakdown voltage and 47A continuous drain current at TC=25°C. This component offers a low on-resistance of 26mOhm maximum at 33A and 10V Vgs. It is designed for surface mounting in the TO-263-3, D2PAK package. Key parameters include a gate charge of 135 nC at 10V and input capacitance of 2500 pF at 25V. The device supports drive voltages between 4.5V and 10V, with a maximum gate-source voltage of ±20V. With a maximum junction temperature of 175°C and a power dissipation of 175W at TC, this MOSFET is suitable for high-power switching applications in industries such as industrial automation and power supplies.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 175W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 2mA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V |
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