IPB47N10S33ATMA1
MOSFET N-CH 100V 47A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel MOSFET, part number IPB47N10S33ATMA1, offers a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 47A (Tc) at 25°C. This surface mount device, packaged in a TO-263-3, D2PAK, features a low on-resistance of 33mOhm at 33A, 10V, with a gate-source voltage drive of 10V. The maximum power dissipation is 175W (Tc), and it operates within a temperature range of -55°C to 175°C. Key parameters include a Gate Charge (Qg) of 105 nC @ 10V and an Input Capacitance (Ciss) of 2500 pF @ 25V. This component is suitable for applications in power supply units, motor control, and industrial automation.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 175W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 2mA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V |
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