IPB45N06S4L08ATMA1
MOSFET N-CH 60V 45A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ series N-Channel Power MOSFET, part number IPB45N06S4L08ATMA1, offers a 60V drain-source voltage and a continuous drain current of 45A at 25°C (Tc). This surface mount device features a low Rds(on) of 7.9mOhm maximum at 45A and 10V Vgs, enabled by its advanced MOSFET technology. The device is packaged in a PG-TO263-3-2 (TO-263-3, D2PAK) configuration, suitable for tape and reel distribution. With a maximum power dissipation of 71W (Tc) and a wide operating temperature range of -55°C to 175°C (TJ), it is designed for demanding applications. Key parameters include a gate charge of 64 nC (max) at 10V Vgs and an input capacitance of 4780 pF (max) at 25V Vds. This component finds application in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.9mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 35µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4780 pF @ 25 V |
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