IPB45N06S409ATMA2
MOSFET N-CH 60V 45A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB45N06S409ATMA2 is an N-Channel Power MOSFET designed for high-efficiency applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 45A at 25°C with a maximum power dissipation of 71W (Tc). The device boasts a low on-resistance (Rds On) of 9.4mOhm at 45A and 10V, facilitated by its 10V gate drive voltage. Key parameters include a gate charge (Qg) of 47 nC at 10V and an input capacitance (Ciss) of 3785 pF at 25V. Mounting is surface mount within a TO-263-3 (D2PAK) package. This automotive-grade component, qualified to AEC-Q101 standards, is suitable for demanding applications in the automotive sector. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 34µA |
| Supplier Device Package | PG-TO263-3-2 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3785 pF @ 25 V |
| Qualification | AEC-Q101 |
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