IPB45N06S409ATMA1
MOSFET N-CH 60V 45A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ MOSFET, part number IPB45N06S409ATMA1, is an N-channel power MOSFET designed for demanding applications. This device features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 45A at 25°C (Tc). With a low on-resistance (Rds(on)) of 9.1mOhm at 45A and 10V Vgs, it minimizes conduction losses. The IPB45N06S409ATMA1 offers a maximum power dissipation of 71W (Tc) and a gate charge (Qg) of 47 nC at 10V, facilitating efficient switching. Its TO-263-3, D2PAK surface mount package is suitable for automated assembly processes. Operating across a wide temperature range of -55°C to 175°C (TJ), this MOSFET finds utility in automotive, industrial power, and power supply applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.1mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 34µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3785 pF @ 25 V |
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