IPB45N06S3-16
MOSFET N-CH 55V 45A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ series IPB45N06S3-16 is a N-Channel Power MOSFET designed for high-efficiency power management applications. This component features a 55V drain-source voltage and a continuous drain current of 45A at 25°C (Tc). With a low on-resistance of 15.4mOhm at 23A and 10V Vgs, it minimizes conduction losses. The device is housed in a PG-TO263-3-2 package, suitable for surface mounting. Key electrical parameters include a maximum gate charge (Qg) of 57 nC at 10V and input capacitance (Ciss) of 2980 pF at 25V. It operates within a temperature range of -55°C to 175°C (TJ) and offers a maximum power dissipation of 65W (Tc). This MOSFET finds utility in sectors such as automotive, industrial power, and consumer electronics.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 15.4mOhm @ 23A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 30µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2980 pF @ 25 V |
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