IPB45N04S4L08ATMA1
MOSFET N-CH 40V 45A TO263-3-2Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ series MOSFET, part number IPB45N04S4L08ATMA1, is an N-Channel power MOSFET with a drain-source voltage of 40V. This device offers a continuous drain current of 45A at 25°C (Tc) and a maximum power dissipation of 45W (Tc). The Rds(on) is specified at a low 7.6mOhm at 45A and 10V Vgs. Key parameters include a gate charge of 30nC (max) at 10V Vgs and an input capacitance of 2340pF (max) at 25V Vds. This component utilizes surface mount technology, packaged in a TO-263-3-2 (PG-TO263-3-2) configuration, suitable for demanding applications in automotive and industrial power management. It operates across a wide temperature range of -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.6mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 17µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2340 pF @ 25 V |