IPB407N30NATMA1
MOSFET N-CH 300V 44A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB407N30NATMA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 300V drain-source voltage (Vdss) and a continuous drain current (Id) of 44A at 25°C (Tc). With a maximum on-resistance (Rds On) of 40.7mOhm at 44A and 10V Vgs, it offers excellent conduction losses. The device boasts a high power dissipation capability of 300W (Tc) and a wide operating temperature range from -55°C to 175°C. Key parameters include a gate charge (Qg) of 87 nC at 10V and input capacitance (Ciss) of 7180 pF at 100V. The IPB407N30NATMA1 is housed in a TO-263-3, D2PAK surface-mount package and is supplied on tape and reel. This MOSFET is suitable for use in industries such as automotive and industrial power supplies.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 40.7mOhm @ 44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7180 pF @ 100 V |
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