IPB35N12S3L26ATMA1
MOSFET N-CHANNEL_100+Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPB35N12S3L26ATMA1, offers 120V drain-source voltage and sustained drain current of 35A at 25°C. This surface mount device, packaged in a PG-TO263-3-2 (TO-263AB), features a low Rds(on) of 26.3mOhm at 35A and 10V. With a maximum power dissipation of 71W at 25°C, it is suitable for demanding applications. The MOSFET exhibits a gate charge (Qg) of 30 nC at 10V and input capacitance (Ciss) of 2700 pF at 25V. Designed for automotive applications, this component is AEC-Q101 qualified and operates within a temperature range of -55°C to 175°C. Its advanced technology ensures efficient performance in power conversion and management systems across various automotive sectors.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 26.3mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 39µA |
| Supplier Device Package | PG-TO263-3-2 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 120 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V |
| Qualification | AEC-Q101 |
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