IPB34CN10NGATMA1
MOSFET N-CH 100V 27A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB34CN10NGATMA1 is a high-performance N-Channel power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 27A at 25°C, with a maximum power dissipation of 58W (Tc). The Rds(on) is specified at a low 34mOhm at 27A and 10V gate drive. Key parameters include a gate charge (Qg) of 24 nC (max) and input capacitance (Ciss) of 1570 pF (max). Housed in a TO-263-3, D2PAK package, this surface mount device operates across a temperature range of -55°C to 175°C. The IPB34CN10NGATMA1 is suitable for use in automotive, industrial power, and renewable energy systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 27A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 58W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 29µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1570 pF @ 50 V |
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