IPB339N20NM6ATMA1
MOSFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 200 V 6.8A (Ta), 39A (Tc) 3.8W (Ta), 125W (Tc) Surface Mount PG-TO263-3-2
Additional Information
Series: OptiMOS™ 6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Ta), 39A (Tc) |
| Rds On (Max) @ Id, Vgs | 31.8mOhm @ 26A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 52µA |
| Supplier Device Package | PG-TO263-3-2 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 15V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 100 V |
| Qualification | - |
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