IPB26CN10NGATMA1
MOSFET N-CH 100V 35A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies OptiMOS™ IPB26CN10NGATMA1 is an N-channel power MOSFET designed for high-efficiency power conversion applications. Featuring a Drain-Source Voltage (Vdss) of 100V and a continuous Drain current (Id) of 35A at 25°C, this device offers a low on-resistance of 26mOhm at 10V Vgs. The device utilizes advanced MOSFET technology for optimized switching performance, with a typical gate charge (Qg) of 31 nC at 10V. Its robust thermal capabilities are supported by a maximum power dissipation of 71W at 25°C (Tc). Packaged in a surface-mount TO-263-3 (D2PAK) configuration, the IPB26CN10NGATMA1 is suitable for demanding applications in the automotive and industrial sectors. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 39µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2070 pF @ 50 V |
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