IPB260N06N3GATMA1
MOSFET N-CH 60V 27A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB260N06N3GATMA1 is an N-channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 27A at 25°C (Tc). With a low on-resistance (Rds On) of 25.7mOhm at 27A and 10V, it minimizes conduction losses. The device offers a maximum power dissipation of 36W (Tc) and operates efficiently across a temperature range of -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 15 nC at 10V and input capacitance (Ciss) of 1200 pF at 30V. The IPB260N06N3GATMA1 is housed in a TO-263-3, D2PAK (2 Leads + Tab) package, suitable for surface mounting. This MOSFET finds application in power management, automotive systems, and industrial motor control.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 25.7mOhm @ 27A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 36W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 11µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 30 V |
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