IPB25N06S3-25
MOSFET N-CH 55V 25A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB25N06S3-25 is an N-channel power MOSFET designed for high-efficiency applications. This component features a drain-to-source voltage (Vdss) of 55V and a continuous drain current (Id) of 25A at 25°C, with a maximum power dissipation of 48W. The on-resistance (Rds On) is specified at a maximum of 24.8mOhm at 15A and 10V gate-source voltage.
Key electrical characteristics include a gate charge (Qg) of 41nC at 10V and an input capacitance (Ciss) of 1862pF at 25V. The device operates over an extended temperature range from -55°C to 175°C. It is housed in a PG-TO263-3-2 surface mount package, commonly known as TO-263AB or D2PAK. This MOSFET technology is suitable for industrial, automotive, and power supply applications requiring robust performance and thermal management. The maximum gate-source voltage (Vgs) is ±20V.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 24.8mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 20µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1862 pF @ 25 V |
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