IPB240N03S4LR9ATMA1
MOSFET N-CH 30V 240A TO263-7Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB240N03S4LR9ATMA1 is an N-Channel Power MOSFET designed for high-current applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 240A at 25°C. The ultra-low on-resistance of 0.92mOhm at 100A and 10V (Vgs) minimizes conduction losses, while the 231W maximum power dissipation (Pd) at 25°C (Tc) supports demanding thermal management. The device is housed in a PG-TO263-7-3 (TO-263-7, D2PAK) surface mount package, suitable for automated assembly. With a gate charge (Qg) of 300 nC at 10V (Vgs) and input capacitance (Ciss) of 20300 pF at 25V (Vds), it offers efficient switching characteristics. The operating temperature range of -55°C to 175°C (TJ) and AEC-Q101 qualification make it suitable for automotive and industrial power systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 240A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.92mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 231W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 180µA |
| Supplier Device Package | PG-TO263-7-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 20300 pF @ 25 V |
| Qualification | AEC-Q101 |
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