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IPB240N03S4LR8ATMA1

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IPB240N03S4LR8ATMA1

MOSFET N-CH 30V 240A TO263-7

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ IPB240N03S4LR8ATMA1 is an N-Channel power MOSFET designed for high-performance applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 240A at 25°C (Tc). With a low on-resistance of 0.76mOhm at 100A and 10V Vgs, it minimizes conduction losses. The IPB240N03S4LR8ATMA1 offers a maximum power dissipation of 300W (Tc) and operates within a junction temperature range of -55°C to 175°C. It is supplied in a PG-TO263-7-3 package, suitable for surface mounting. The MOSFET is AEC-Q101 qualified, indicating its suitability for automotive applications. Key parameters include a gate charge of 380nC at 10V Vgs and input capacitance of 26000pF at 25V Vds. This component finds use in automotive power management and industrial motor control systems.

Additional Information

Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C240A (Tc)
Rds On (Max) @ Id, Vgs0.76mOhm @ 100A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id2.2V @ 230µA
Supplier Device PackagePG-TO263-7-3
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds26000 pF @ 25 V
QualificationAEC-Q101

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