IPB200N15N3GATMA1
MOSFET N-CH 150V 50A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPB200N15N3GATMA1. This device features a Drain-to-Source Voltage (Vdss) of 150V and a continuous drain current (Id) of 50A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 20mOhm at 50A and 10V Vgs, it offers efficient power switching. The MOSFET is housed in a PG-TO263-3 (D2PAK) surface mount package and supports a maximum power dissipation of 150W (Tc). Key parameters include a gate charge (Qg) of 31 nC at 10V and input capacitance (Ciss) of 1820 pF at 75V. This component is suitable for applications in automotive and industrial power systems. Operating temperature ranges from -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 90µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1820 pF @ 75 V |
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