IPB180P04P4L02AUMA2
MOSFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS®-P2 series P-Channel Power MOSFET, part number IPB180P04P4L02AUMA2, offers a 40V drain-source voltage and a continuous drain current of 180A at 25°C (Tc). This surface mount device, packaged in a PG-TO263-7-3 (TO-263-7, D2PAK), features a low Rds(on) of 2.4mOhm maximum at 100A and 10V. With a maximum power dissipation of 150W (Tc) and a junction temperature range of -55°C to 175°C, it is suitable for demanding applications. The MOSFET exhibits a gate charge of 286 nC maximum at 10V and an input capacitance (Ciss) of 18700 pF maximum at 25V. This component is widely utilized in automotive and industrial power management systems.
Additional Information
Series: OptiMOS®-P2RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 410µA |
| Supplier Device Package | PG-TO263-7-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +5V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 286 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 18700 pF @ 25 V |
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