IPB180P04P4L02ATMA1
MOSFET P-CH 40V 180A TO263-7Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB180P04P4L02ATMA1 is a P-Channel Power MOSFET designed for demanding applications. This component features a 40V Vdss rating and a continuous drain current capability of 180A at 25°C (Tc), with a maximum power dissipation of 150W (Tc). The low on-resistance of 2.4mOhm at 100A and 10V, achieved with a 10V gate drive, ensures high efficiency. It offers a gate charge (Qg) of 286 nC (max) at 10V and input capacitance (Ciss) of 18700 pF (max) at 25V. The device is housed in a PG-TO263-7-3 (TO-263-7, D2PAK) surface mount package and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for use in power supply switching, automotive, and industrial motor control applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 410µA |
| Supplier Device Package | PG-TO263-7-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 286 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 18700 pF @ 25 V |
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