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IPB180P04P403ATMA1

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IPB180P04P403ATMA1

MOSFET P-CH 40V 180A TO263-7

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ IPB180P04P403ATMA1 is a P-Channel Power MOSFET designed for demanding applications. This device features a 40V drain-source breakdown voltage and a continuous drain current capability of 180A at 25°C (Tc). With a low on-resistance of 2.8mOhm at 100A and 10V Vgs, it offers excellent conduction efficiency. The MOSFET is housed in a PG-TO263-7-3 (TO-263-7, D2PAK) surface mount package, facilitating efficient thermal management with a maximum power dissipation of 150W (Tc). Key parameters include a gate charge (Qg) of 250 nC at 10V and input capacitance (Ciss) of 17640 pF at 25V. Qualified to AEC-Q101 standards, this component is suitable for automotive and industrial power management systems. The operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Rds On (Max) @ Id, Vgs2.8mOhm @ 100A, 10V
FET Feature-
Power Dissipation (Max)150W (Tc)
Vgs(th) (Max) @ Id4V @ 410µA
Supplier Device PackagePG-TO263-7-3
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds17640 pF @ 25 V
QualificationAEC-Q101

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