IPB180N10S403ATMA1
MOSFET N-CH 100V 180A TO263-7Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB180N10S403ATMA1 is an N-channel Power MOSFET designed for high-efficiency power switching applications. This component features a 100 V drain-source voltage (Vdss) and a continuous drain current (Id) of 180 A at 25°C (Tc). The Rds(on) is specified at a maximum of 3.3 mOhm at 100 A and 10 V Vgs. With a high power dissipation capability of 250 W (Tc) and a low gate charge of 140 nC (max) at 10 V Vgs, it is suitable for demanding power designs. The device is housed in a PG-TO263-7-3 surface mount package and is AEC-Q101 qualified, indicating its suitability for automotive applications. Key parameters include a gate-source threshold voltage of 3.5 V (max) at 180 µA and a maximum gate-source voltage of ±20 V. Operating temperature ranges from -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 180µA |
| Supplier Device Package | PG-TO263-7-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10120 pF @ 25 V |
| Qualification | AEC-Q101 |
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