IPB180N04S4L01ATMA1
MOSFET N-CH 40V 180A TO263-7Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB180N04S4L01ATMA1 is an N-channel Power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 40V and a continuous drain current (Id) of 180A at 25°C (Tc). The low on-resistance of 1.2 mOhm is achieved at 100A and 10V Vgs. Key electrical characteristics include a maximum gate charge (Qg) of 245 nC at 10V Vgs and input capacitance (Ciss) of 19100 pF at 25V Vds. The device is built on MOSFET technology and is supplied in a PG-TO263-7-3 surface mount package, also known as TO-263-7. With a maximum power dissipation of 188W (Tc) and an operating temperature range of -55°C to 175°C (TJ), it is qualified to AEC-Q101 and carries an Automotive grade designation. This MOSFET is suitable for demanding automotive and industrial power conversion systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 188W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 140µA |
| Supplier Device Package | PG-TO263-7-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 245 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 19100 pF @ 25 V |
| Qualification | AEC-Q101 |
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