IPB180N03S4LH0ATMA1
MOSFET N-CH 30V 180A TO263-7Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB180N03S4LH0ATMA1 is an N-channel Power MOSFET designed for high-performance switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 180A at 25°C, with a maximum power dissipation of 250W. The low on-resistance of 0.95mOhm at 100A and 10V, coupled with a Gate Charge (Qg) of 300 nC at 10V, ensures efficient operation.
The IPB180N03S4LH0ATMA1 utilizes a surface mountable TO-263-7 (PG-TO263-7-3) package, facilitating integration into compact designs. Its operating temperature range of -55°C to 175°C (TJ) and ±16V Vgs (Max) provide robust operability. This MOSFET is suitable for power management, automotive, and industrial applications demanding high current handling and low power loss. The component is supplied in tape and reel packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.95mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 200µA |
| Supplier Device Package | PG-TO263-7-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 23000 pF @ 25 V |