IPB180N03S4L01ATMA1
MOSFET N-CH 30V 180A TO263-7Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPB180N03S4L01ATMA1, offers a 30V drain-source voltage and a continuous drain current of 180A at 25°C. This device features a low on-resistance of 1.05mOhm maximum at 100A and 10V gate-source voltage, with a maximum gate charge of 239 nC at 10V. Designed for surface mounting in the PG-TO263-7-3 package, it provides 188W of power dissipation. Applications include automotive, industrial power supplies, and motor control systems. The operating temperature range is -55°C to 175°C.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.05mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 188W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 140µA |
| Supplier Device Package | PG-TO263-7-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 239 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 17600 pF @ 25 V |
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