IPB16CN10N G
MOSFET N-CH 100V 53A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, IPB16CN10N-G, features a 100V drain-source voltage and 53A continuous drain current at 25°C (Tc). This device offers a low on-resistance of 16.5mOhm maximum at 53A and 10V Vgs. The IPB16CN10N-G has a maximum power dissipation of 100W (Tc) and a gate charge of 48nC at 10V. Key parameters include an input capacitance (Ciss) of 3220pF maximum at 50V Vds and a gate threshold voltage (Vgs(th)) of 4V maximum at 61µA. Designed for surface mounting, it is housed in a TO-263-3, D2PAK package. This component is suitable for applications in power management and automotive sectors. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 53A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 53A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 61µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3220 pF @ 50 V |
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