IPB160N08S403ATMA1
MOSFET N-CH 80V 160A TO263-7Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPB160N08S403ATMA1, offers an 80V drain-source breakdown voltage and a continuous drain current capability of 160A at 25°C (Tc). This device features a low on-resistance of 3.2mOhm maximum at 100A and 10V gate-source drive voltage, enabled by its advanced MOSFET technology. With a maximum power dissipation of 208W (Tc), the IPB160N08S403ATMA1 is suitable for demanding applications. It is packaged in a surface mount PG-TO263-7-3 (D2PAK) and is AEC-Q101 qualified, indicating its suitability for automotive applications. Key electrical parameters include a gate charge of 112 nC at 10V and input capacitance of 7750 pF at 25V. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | PG-TO263-7-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 112 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7750 pF @ 25 V |
| Qualification | AEC-Q101 |
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