IPB160N04S203ATMA4
MOSFET N-CH 40V 160A TO263-7Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB160N04S203ATMA4 is an N-Channel Power MOSFET designed for high-performance applications. This component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) rating of 160A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 2.9mOhm maximum at 60A and 10V Vgs. With a maximum power dissipation of 300W (Tc), it is suitable for demanding thermal environments. The TO-263-7 (PG-TO263-7-3) surface mount package facilitates efficient board assembly. Key electrical parameters include a gate charge (Qg) of 170nC at 10V Vgs and input capacitance (Ciss) of 5300pF at 25V Vds. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive, industrial power supply, and power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO263-7-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 25 V |
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