IPB160N04S203ATMA1
MOSFET N-CH 40V 160A TO263-7Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number IPB160N04S203ATMA1, features a 40V drain-source breakdown voltage and a continuous drain current of 160A at 25°C (Tc). This device offers a maximum on-resistance of 2.9mOhm at 60A and 10V Vgs. The IPB160N04S203ATMA1 is housed in a PG-TO263-7-3 surface mount package, commonly known as TO-263-7, and supports a maximum power dissipation of 300W (Tc). Key characteristics include a gate charge of 170 nC at 10V and input capacitance of 5300 pF at 25V. This component is suitable for demanding applications in automotive, industrial power supplies, and motor control systems. It operates within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO263-7-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 25 V |
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