IPB147N03LGATMA1
MOSFET N-CH 30V 20A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies IPB147N03LGATMA1 is an N-Channel Power MOSFET from the OptiMOS™ series. This component offers a 30 V drain-source breakdown voltage and a continuous drain current capability of 20A at 25°C (Tc), with a maximum power dissipation of 31W (Tc). Featuring a low on-resistance of 14.7mOhm at 20A, 10V, it is optimized for demanding applications. The device utilizes a surface mount TO-263-3, D2PAK package and supports gate drive voltages from 4.5V to 10V. Key electrical characteristics include a maximum gate charge of 10 nC at 10V and input capacitance of 1000 pF at 15V. Operating across a wide temperature range from -55°C to 175°C, this MOSFET is suitable for power management, automotive, and industrial automation sectors.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 15 V |
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