IPB144N12N3GATMA1
MOSFET N-CH 120V 56A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPB144N12N3GATMA1, offers a 120V drain-source voltage and a continuous drain current of 56A at 25°C ambient. This device features a low on-resistance of 14.4 mOhm at 10V Vgs and 56A Id, with a gate charge of 49 nC at 10V. The input capacitance (Ciss) is specified at a maximum of 3220 pF at 60V. Designed for surface mount applications, it utilizes the PG-TO263-3 (D2PAK) package. With a maximum power dissipation of 107W at 25°C case temperature and an operating junction temperature range of -55°C to 175°C, this MOSFET is suitable for demanding power conversion and motor control applications in the automotive and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Ta) |
| Rds On (Max) @ Id, Vgs | 14.4mOhm @ 56A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 61µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 120 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3220 pF @ 60 V |
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