IPB140N08S404ATMA1
MOSFET N-CH 80V 140A TO263-7Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number IPB140N08S404ATMA1. This surface mount device features an 80V drain-source breakdown voltage and a continuous drain current capability of 140A at 25°C (Tc). With a low on-resistance of 4.2mOhm maximum at 100A and 10V Vgs, it offers efficient power handling with a maximum power dissipation of 161W (Tc). The device is housed in a PG-TO263-7-3 package and is qualified to AEC-Q101 standards, making it suitable for automotive applications. Key parameters include a gate charge of 80nC (max) at 10V and input capacitance of 5500pF (max) at 25V. Operating temperature ranges from -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 140A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 161W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | PG-TO263-7-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 25 V |
| Qualification | AEC-Q101 |
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