IPB136N08N3 G
MOSFET N-CH 80V 45A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB136N08N3-G is an N-channel power MOSFET designed for high-efficiency power conversion applications. This device features an 80V drain-source breakdown voltage and a continuous drain current capability of 45A at 25°C (Tc), with a maximum power dissipation of 79W (Tc). The low on-resistance, specified as 13.6mOhm at 45A and 10V (Vgs), minimizes conduction losses. Key parameters include a gate charge of 25 nC (max) at 10V (Vgs) and an input capacitance (Ciss) of 1730 pF (max) at 40V (Vds). The IPB136N08N3-G is housed in a PG-TO263-3 (TO-263-3, D2PAK) surface-mount package and operates across a wide temperature range of -55°C to 175°C (TJ). This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.6mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 33µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1730 pF @ 40 V |
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