IPB12CNE8N G
MOSFET N-CH 85V 67A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, IPB12CNE8N-G, is a high-performance device designed for demanding applications. This surface mount component features a Drain-to-Source Voltage (Vdss) of 85 V and a continuous drain current (Id) of 67 A at 25°C. The Rds(on) is specified at a maximum of 12.9 mOhm at 67 A and 10 V gate drive. Power dissipation (Pd) reaches 125 W (Tc) with a Tj operating range of -55°C to 175°C. Key parameters include a maximum gate charge (Qg) of 64 nC at 10 V and input capacitance (Ciss) of 4340 pF at 40 V. The device is housed in a PG-TO263-3 package, commonly known as D2PAK. This Infineon Technologies MOSFET is suitable for power management and switching applications across various industries.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.9mOhm @ 67A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 83µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4340 pF @ 40 V |
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