IPB12CN10NGATMA2
MOSFET N-CH 100V 67A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IPB12CN10NGATMA2 is a high-performance N-channel Power MOSFET designed for demanding applications. This component features a 100V drain-source voltage rating and a continuous drain current capability of 67A, housed in a TO-263-3 package for efficient thermal management. Its robust construction and optimized gate charge characteristics make it suitable for power switching applications in automotive systems, industrial motor control, and power supply units. The TO-263-3 package, supplied on tape and reel, facilitates high-volume automated assembly processes. This MOSFET is engineered for reliability and efficiency in power conversion and management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
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