IPB12CN10N G
MOSFET N-CH 100V 67A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB12CN10N-G is an N-channel power MOSFET designed for high-performance applications. This device features a 100 V drain-source voltage (Vdss) and a continuous drain current (Id) of 67A at 25°C (Tc). The low on-resistance of 12.6mOhm at 67A and 10V gate-source voltage (Vgs) contributes to efficient power handling, with a maximum power dissipation of 125W (Tc).
The IPB12CN10N-G is housed in a PG-TO263-3 package, also known as D2PAK, enabling surface mounting. Key electrical characteristics include a maximum gate charge (Qg) of 65 nC at 10V and an input capacitance (Ciss) of 4320 pF at 50V. The operating junction temperature range is -55°C to 175°C. This MOSFET is suitable for demanding power management solutions across various industries, including automotive and industrial automation.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.6mOhm @ 67A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 83µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4320 pF @ 50 V |
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