IPB123N10N3GATMA1
MOSFET N-CH 100V 58A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPB123N10N3GATMA1 is an N-Channel Power MOSFET designed for high-performance applications. This component features a 100 V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 58 A at 25°C (Tc), with a maximum power dissipation of 94 W (Tc). The low on-resistance (Rds On) of 12.3 mOhm at 46 A and 10 V gate-source voltage ensures efficient operation. Key parameters include a gate charge (Qg) maximum of 35 nC at 10 V and an input capacitance (Ciss) maximum of 2500 pF at 50 V. The device is housed in a PG-TO263-3, D2PAK package, suitable for surface mounting. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is utilized in industries such as automotive and industrial power systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.3mOhm @ 46A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 46µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 50 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
