IPB120P04P4L03ATMA1
MOSFET P-CH 40V 120A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies P-Channel Power MOSFET, part number IPB120P04P4L03ATMA1, offers robust performance within the OptiMOS™ series. This device features a 40V breakdown voltage and a continuous drain current capability of 120A at 25°C (Tc), with a maximum power dissipation of 136W (Tc). The low on-resistance of 3.1mOhm is achieved at 100A and 10V gate-source voltage. Designed for surface mounting, it utilizes the TO-263-3, D2PAK package for efficient thermal management. Key parameters include a gate charge of 234nC (max) at 10V and input capacitance of 15000pF (max) at 25V. This component is commonly employed in automotive applications, power supplies, and industrial motor control systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 340µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 234 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15000 pF @ 25 V |