IPB120P04P404ATMA1
MOSFET P-CH 40V 120A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ P-Channel MOSFET, part number IPB120P04P404ATMA1, is a high-performance surface mount device in a TO-263-3, D2PAK package. This automotive-grade component features a 40V drain-source voltage and a continuous drain current capability of 120A at 25°C (Tc). With a low on-resistance of 3.5mOhm at 100A and 10V, it offers excellent power efficiency. The device supports a maximum power dissipation of 136W (Tc) and operates across a wide temperature range from -55°C to 175°C (TJ). Key parameters include a gate charge of 205 nC @ 10V and input capacitance of 14790 pF @ 25V. The IPB120P04P404ATMA1 is qualified to AEC-Q101 standards and is suitable for demanding applications in the automotive sector.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 340µA |
| Supplier Device Package | PG-TO263-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 205 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14790 pF @ 25 V |
| Qualification | AEC-Q101 |
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