IPB120N08S404ATMA1
MOSFET N-CH 80V 120A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPB120N08S404ATMA1, features an 80V drain-source voltage and a continuous drain current of 120A at 25°C (Tc). This surface mount device, housed in a TO-263-3, D2PAK package, offers a low on-resistance of 4.1mOhm at 100A and 10V gate drive. With a maximum power dissipation of 179W (Tc) and a junction temperature range of -55°C to 175°C, this AEC-Q101 qualified component is engineered for demanding automotive applications. Key parameters include a gate charge (Qg) of 95nC at 10V and input capacitance (Ciss) of 6450pF at 25V.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 179W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 120µA |
| Supplier Device Package | PG-TO263-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6450 pF @ 25 V |
| Qualification | AEC-Q101 |
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