IPB120N06S4H1ATMA2
MOSFET N-CH 60V 120A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB120N06S4H1ATMA2 is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 120A at 25°C (Tc), with a maximum power dissipation of 250W (Tc). The low on-resistance of 2.4mOhm at 100A and 10V (Vgs) minimizes conduction losses, critical for high-efficiency power conversion. Key parameters include a Gate Charge (Qg) of 270 nC at 10V (Vgs) and an input capacitance (Ciss) of 21900 pF at 25V (Vds). This component utilizes a TO-263-3, D2PAK surface mount package for efficient thermal management, operating across a wide temperature range of -55°C to 175°C (TJ). The IPB120N06S4H1ATMA2 is qualified to AEC-Q101 standards, making it suitable for automotive applications, as well as industrial power supplies and motor control systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 200µA |
| Supplier Device Package | PG-TO263-3-2 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 21900 pF @ 25 V |
| Qualification | AEC-Q101 |
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