IPB120N06S403ATMA1
MOSFET N-CH 60V 120A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB120N06S403ATMA1 is an N-Channel Power MOSFET designed for demanding applications. This device features a 60V drain-source voltage and supports a continuous drain current of 120A at 25°C (Tc) with a maximum power dissipation of 167W (Tc). The OptiMOS™ technology ensures low on-resistance, specified at 2.8mOhm maximum at 100A and 10V gate drive. Key parameters include a gate charge (Qg) of 160 nC at 10V and input capacitance (Ciss) of 13150 pF at 25V. The MOSFET is housed in a PG-TO263-3-2 surface mount package, commonly known as TO-263AB or D2PAK. Operating across a temperature range of -55°C to 175°C (TJ), this component is suitable for automotive and industrial power management systems. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 120µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13150 pF @ 25 V |
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